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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BPF-A730	文件：495.71 Kbytes Page：1 Pages	BandpassFilter	MINIMini-Circuits 微型电路	MINI
BT730	文件：353.26 Kbytes Page：3 Pages	Class1Bluetoothv2.0Module	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
BT730	文件：1.65793 Mbytes Page：31 Pages	modulefromLairdTechnologiesisdesignedtoaddrobust,long-rangeBluetoothdataconnectivitytoanydevice	LSTD Laird Tech Smart Technology	LSTD
BT730-SA	文件：353.26 Kbytes Page：3 Pages	Class1Bluetoothv2.0Module	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
BT730-SA	文件：1.65793 Mbytes Page：31 Pages	modulefromLairdTechnologiesisdesignedtoaddrobust,long-rangeBluetoothdataconnectivitytoanydevice	LSTD Laird Tech Smart Technology	LSTD
BT730-SC	文件：353.26 Kbytes Page：3 Pages	Class1Bluetoothv2.0Module	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
BT730-SC	文件：1.65793 Mbytes Page：31 Pages	modulefromLairdTechnologiesisdesignedtoaddrobust,long-rangeBluetoothdataconnectivitytoanydevice	LSTD Laird Tech Smart Technology	LSTD
BTS730	文件：187.57 Kbytes Page：10 Pages	SmartHigh-SidePowerSwitch	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BTS730	文件：49.97 Kbytes Page：7 Pages	PWMPowerUnit(Thedeviceallowscontinuouspowercontrolforlamps,LEDsorinductiveloads.) PWMPowerUnit Thedeviceallowscontinuouspowercontrolforlamps,LEDsorinductiveloads. •Highsideswitch •Overtemperaturprotection •Shortcircuit/overloadprotectionthroughpulsewidthreductionandoverloadshutdown •Loaddumpprotection •Undervoltageandovervoltageshutdown	SIEMENS Siemens Ltd	SIEMENS
BTS730	文件：135.82 Kbytes Page：7 Pages	PWMPowerUnit PWMPowerUnit Thedeviceallowscontinuouspowercontrolforlamps,LEDsorinductiveloads. ●Highsideswitch(Bootstrap) ●Overtemperaturprotection ●Shortcircuit/overloadprotectionthroughpulsewidthreductionandoverloadshutdown ●Loaddumpprotection ●Undervoltageandovervolta	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
CEB730G	文件：419.95 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB730G	文件：658.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED730G	文件：613.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED730G	文件：414.34 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF730G	文件：419.95 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEF730G	文件：658.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP730G	文件：658.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP730G	文件：419.95 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU730G	文件：414.34 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU730G	文件：613.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	JMPAR30CW009AU013028CREE	IP9		NA	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市共奕科技有限公司	JMPF10N65G1	JJW/捷捷微	1年内	TO-220FP-3L	100000	类别:Planar MOSFETs	询价
深圳市星辰微电科技有限公司	JMPF10N65G1	捷捷微	23+	TO-220FP-3L	68000	捷捷微全系列供应,支持终端生产	询价
深圳市惊羽科技有限公司	JMPK1N60A	JJW	24+25+/26+27+	TO-252-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
京海半导体(深圳)有限公司	JMPK630A	捷捷微	21+	TO-252	10000	原装现货假一罚十	询价

更多JMP730A供应商更新时间2024-5-13 14:29:00

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