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CEF730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free prod

文件:419.95 Kbytes 页数:4 Pages

CET

华瑞

CEF730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating .

文件:658.46 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEF730G

N Channel MOSFET

CET

华瑞

CEP730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free prod

文件:419.95 Kbytes 页数:4 Pages

CET

华瑞

CEP730G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating .

文件:658.46 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEU730G

N-Channel Enhancement Mode Field Effect Transistor

文件:414.34 Kbytes 页数:4 Pages

CET

华瑞

技术参数

  • BVDSS(V):

    400

  • Rds(on)mΩ@10V:

    1000

  • ID(A):

    5.5

  • Qg(nC)@10V(typ):

    14

  • RθJC(℃/W):

    2.5

  • Pd(W):

    41

  • Configuration:

    Single

  • Polarity:

    N

供应商型号品牌批号封装库存备注价格
CET
24+
5000
询价
C
TO-220F
22+
6000
十年配单,只做原装
询价
C
23+
TO-220F
6000
原装正品,支持实单
询价
CET/華瑞
20+
TO-220F
630
现货很近!原厂很远!只做原装
询价
CET
25+
TO-220F
630
原装正品,假一罚十!
询价
TI
24+
QFN12
11016
公司现货库存,支持实单
询价
CET/華瑞
23+
TO-220F
82359
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CET
23+
TO-220F
8560
受权代理!全新原装现货特价热卖!
询价
CEP
24+
TO220F
5000
只做原装公司现货
询价
CEP
24+
NA/
17068
原装现货,当天可交货,原型号开票
询价
更多CEF730G供应商 更新时间2025-10-8 16:30:00