NPN Silicon High-Power 60V to 80V, 20A to 30A

This specification covers the performance requirements for NPN, silicon, high-power, 2N5302 and 2N5303 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/456. The device package for the encapsulated device types is a TO-204AA (similar to TO-3).;

Microchip

微芯科技

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456

文件：68.61 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 10UA TO3

MICROCHIP

微芯科技

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456

文件：68.61 Kbytes 页数：2 Pages

MICROSEMI

美高森美

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

文件：251.85 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(200W)

NPN SILICON HIGH-POWER TRANSISTORS General Purpose use in power amplifier and switching circuit applications.

文件：178.76 Kbytes 页数：4 Pages

MOSPEC

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