NPN Silicon High-Power 60V to 80V, 10A

This specification covers the performance requirements for NPN, silicon, high-power 2N3715 and 2N3716 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/408. The device package outline is a TO–204AA (formerly TO–3).;

Microchip

微芯科技

NPN HIGH POWER SILICON TRANSISTOR

文件：64.18 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 10A TO3

MICROCHIP

微芯科技

NPN HIGH POWER SILICON TRANSISTOR

文件：64.18 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS 10 AMPERE POWER TRANSISTORS NPN SILICON 60-80 VOLTS 150 WATTS

文件：132.23 Kbytes 页数：3 Pages

BOCA

博卡

10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS

Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • Total Switching Time at 3 A typically 1.15 µs • Gain Ranges Specified at 1 A and 3 A • Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A • Excellent Safe Operati

文件：272.9 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉