JANTXV2N3996

NPN Silicon High-Speed Power 80V, 10A; The device package outlines for the encapsulated device types are as follows: 4 terminal stud (TO-111) package for types 2N3996 and 2N3997 and 3 terminal stud (TO-111) package for types 2N3998 and 2N3999.;

This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/374. Two levels of product assurance (JANHC and JANKC) are provided for the unencapsulated die.

JANTXV2N3996

NPN POWER SWITCHING SILICON TRANSISTOR

NPNPOWERSWITCHINGSILICONTRANSISTOR QualifiedperMIL-PRF-19500/374

JANTXV2N3996

Package：TO-111-4，接线柱；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 10UA TO111

2N3996

NPNPOWERSWITCHINGSILICONTRANSISTOR

NPNPOWERSWITCHINGSILICONTRANSISTOR QualifiedperMIL-PRF-19500/374

2N3996

5AMPHIGHSPEEDNPNTRANSISTOR100VOLTS

5AMPHIGHSPEEDNPNTRANSISTOR100VOLTS

2N3996

SiliconNPNTransistor

Description SemicoaSemiconductorsoffers: •ScreeningandprocessingperMIL-PRF-19500AppendixE •JANlevel(2N3996J) •JANTXlevel(2N3996JX) •JANTXVlevel(2N3996JV) •QCItotheapplicablelevel •100dievisualinspectionperMIL-STD-750method2072forJANTXV