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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
JANHCA1N5711	文件：100 bytes Page：1 Pages	包装：散装封装/外壳：DO-204AH，DO-35，轴向类别：分立半导体产品二极管 - 整流器 - 单描述：DIODE SMALL-SIGNAL SCHOTTKY	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
1N5711	文件：217.69 Kbytes Page：2 Pages	15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司	SUNMATE
1N5711	文件：498.37 Kbytes Page：3 Pages	GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.	MA-COM
1N5711	文件：264.7 Kbytes Page：7 Pages	PicoSecondSwitchingSpeed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAVAGO TECHNOLOGIES LIMITED 安华高	AVAGO
1N5711	文件：137.65 Kbytes Page：2 Pages	SmallSignalSchottkyDiodes VOLTAGERANGE:70VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司	LUGUANG
1N5711	文件：269.1 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	DSK Diode Semiconductor Korea	DSK
1N5711	文件：273.845 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N5711	文件：128.49 Kbytes Page：4 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体股份有限公司	MCC
1N5711	文件：124.62 Kbytes Page：1 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N5711	文件：67.45 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：55.97 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：36.05 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC discrete Semiconductors	EIC
1N5711	文件：56.73 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N5711	文件：30.8 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5711	文件：82.78 Kbytes Page：2 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司	CHENYI
1N5711	文件：36.02 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：46.24 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N5711	文件：126.35 Kbytes Page：2 Pages	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark GOOD-ARK Electronics	Good-Ark
1N5711	文件：99.85 Kbytes Page：2 Pages	SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company	GE
1N5711	文件：110.08 Kbytes Page：2 Pages	SchottkyBarrierSwitchingDiode Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体股份有限公司	MCC

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产品属性

产品编号：
JANHCA1N5711
制造商：
Microchip Technology
类别：
分立半导体产品 > 二极管 - 整流器 - 单
系列：
Military, MIL-PRF-19500/444
包装：
散装
二极管类型：
肖特基
电流 - 平均整流 (Io)：
33mA
速度：
小信号 =< 200mA（Io），任意速度
不同 Vr、F 时电容：
2pF @ 0V，1MHz
安装类型：
通孔
封装/外壳：
DO-204AH，DO-35，轴向
供应商器件封装：
DO-35（DO-204AH）
工作温度 - 结：
-65°C ~ 150°C
描述：
DIODE SMALL-SIGNAL SCHOTTKY

供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	JANHCA1N5711	CDI	21+		35200	一级代理/放心采购	询价
深圳市高捷芯城科技有限公司	JANHCA1N5711	MICROCHIP(美国微芯)	23+	DO35(DO204AH)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市宏捷佳电子科技有限公司	JANHCA1N5711	Microchip Technology	24+	DO-35(DO-204AH)	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
现代芯城（深圳）科技有限公司	JANHCA1N5711		24+	N/A	60000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市微纳尔电子实业有限公司	JANHCA1N914	Microchip	21+		15000	只做原装	询价
深圳市川蓝电子科技有限公司	JANHCA1N914	microchipdirect	23+		15420	原包装原标现货,假一罚十,	询价

更多JANHCA1N5711供应商更新时间2024-9-24 8:30:00

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