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MTP3N60F

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP3N60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP3N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MTP3N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

PHB3N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N60Eissupp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP3N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP3N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N60Eissupp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHX3N60E

PowerMOStransistorsAvalancheenergyrated

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHX3N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

RM3N60EA

N-ChannelEnhancementModePowerMOSFET

Features BV>60VPtot

RECTRON

Rectron Semiconductor

技术参数

  • Maximum On-Resistance @ 25 ℃ (Ohm):

    2.9

  • Continuous Drain Current @ 25 ℃ (A):

    3

  • Gate Charge (nC):

    9.8

  • Thermal resistance [junction-case](K/W):

    1.8

  • Configuration:

    Single

  • Package Type:

    TO-252

  • Typical Reverse Recovery Time (ns):

    500

  • Power Dissipation (W):

    70

  • Sample Request:

    No

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
24+
TO-252
501568
免费送样原盒原包现货一手渠道联系
询价
IXYS
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-252
3675
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
I
23+
TO-252
6000
原装正品,支持实单
询价
VBsemi
21+
TO252
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IXYS
2022+
TO-252-3,DPak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS/艾赛斯
2022+
TO-252
30000
进口原装现货供应,原装 假一罚十
询价
更多IXTY3N60P供应商 更新时间2025-7-28 17:06:00