IXTY-3N60P规格书原装现货艾赛斯IXYS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IXTY-3N60P	文件：234.48 Kbytes Page：4 Pages	N-Channel Enhancement Mode Avalanche Rated 文件：234.48 Kbytes 页数：4 Pages	IXYS 艾赛斯	IXYS
KEMF3N60	文件：1.64437 Mbytes Page：6 Pages	600V N-Channel MOSFET 文件：1.64437 Mbytes 页数：6 Pages	KERSEMI	KERSEMI
KF3N60D	文件：87.56 Kbytes Page：6 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D 文件：87.56 Kbytes 页数：6 Pages	KEC KEC(Korea Electronics)	KEC
KF3N60D	文件：1.01371 Mbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D 文件：1.01371 Mbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC

更多IXTY-3N60P供应商更新时间2025-12-3 10:03:00