High Voltage MOSFET

High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re

文件：68.38 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =50Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.02 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage MOSFET

High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re

文件：68.38 Kbytes 页数：2 Pages

IXYS

艾赛斯