MegaMOS FET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Low package inductance (

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IXYS

艾赛斯

MegaMOS™FET

N-Channel Enhancement Mode ● International standard packages\n● Low RDS(on) HDMOS™ process\n● Rugged polysilicon gate cell structure\n● Low package inductance (< 5 nH)\n   - easy to drive and to protect\n● Fast switching timesApplications\n● Switch-mode and resonant-mode power supplies\n● Motor controls\n● Uninterruptible Pow;

Littelfuse

力特

N-Channel, Depletion Mode

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

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MOTOROLA

摩托罗拉