首页 >IXTN120N25>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXTN120N25 | High Current MegaMOS FET | IXYS IXYS Integrated Circuits Division | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier | IXYS IXYS Integrated Circuits Division | |||
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCcon | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PolarPowerMOSFETHiPerFET N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features •InternationalStandardPackages •FastIntrinsicDiode •AvalancheRated •LowPackageInductance Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •Switched-ModeandResonant-ModePowe | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCcon | IXYS IXYS Integrated Circuits Division | |||
PolarPowerMOSFETHiPerFET N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features •InternationalStandardPackages •FastIntrinsicDiode •AvalancheRated •LowPackageInductance Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •Switched-ModeandResonant-ModePowe | IXYS IXYS Integrated Circuits Division | |||
HighCurrentMegaMOSFET | IXYS IXYS Integrated Circuits Division | |||
HighCurrentMegaMOSFET HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easyto | IXYS IXYS Integrated Circuits Division | |||
PolarHTPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackage •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | |||
Nch250V12APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
10VDriveNchMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Switching(250V,12A) Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)Exellentresistancetodamagefromstaticelectricity. Application Switching | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
THREE-TERMINALLOW-DROPOUTPOSITIVE-VOLTAGEREGULATOR(OUTPUTCURRENT:0.3A) TheµPD120Nxxseriesprovideslow-voltageoutputregulatorswiththeoutputcurrentcapacitanceof0.3A.Theoutputvoltagevariesaccordingtotheproduct(1.5V,1.8V,2.5V,or3.3V).ThecircuitcurrentislowduetotheCMOSstructure,sothepowerconsumptionintheICscanbereduced. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |
详细参数
- 型号:
IXTN120N25
- 功能描述:
MOSFET 120 Amps 250V 0.02 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS |
23+ |
SOT-227B |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS |
19+/20+ |
SOT-227B |
1000 |
主打产品价格优惠.全新原装正品 |
询价 | ||
IXYS |
2022 |
SOT-227B |
58 |
原厂原装正品,价格超越代理 |
询价 | ||
IXYS |
23+ |
MOSFETN-CH250V120ASOT-22 |
1690 |
专业代理销售半导体模块,能提供更多数量 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
SOT-227 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
SOT2274 miniBLOC |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
SOT2274 miniBLOC |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS |
23+ |
SOT2274 miniBLOC |
9000 |
原装正品,支持实单 |
询价 |
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