IXTL2X180N10T

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

IXTL2x180N10T

N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options; ·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages\n;