TrenchMVTM Power MOSFET

VDSS = 100V ID25 = 80A RDS(on) ≤ 14mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features International Standard Packages 175°C Operating Temperature Avalanche Rated High Current Handling Capability Fast Intrinsic Diode Low RDS(on)

文件：190.48 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：294.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：169.02 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道沟槽栅 Gen1 MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

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力特

N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

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力特