IXTA1N100

High Voltage MOSFET

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb

IXTA1N100

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

IXTA1N100

N通道标准MOSFET; • 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on)\n;

IXTA1N100P

Polar Power MOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications

IXTA1N100P

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

IXTA1N100P

N通道标准 Polar™ MOSFET; • 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感\n;