CoolMOS Power MOSFET ISOPLUS220

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-Channel: Super Junction COOLMOS™ Power MOSFETs

·VDss = 600V and 800V\n·Avalanche energy rated\n·Id(25): 13A - 85A\n·Ultra-low Rds(on) - 36 milliohms\n·COOLMOS™ MOSFET with FRED Diode (IXKF40N60SCD1)for trr below 70 ns\n·Please note: COOLMOS™ is a trademark of Infineon Technologies;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：98.75 Kbytes 页数：4 Pages

IXYS

艾赛斯

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：98.75 Kbytes 页数：4 Pages

IXYS

艾赛斯