MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：98.75 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：368.1 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Littelfuse

力特

MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：98.75 Kbytes 页数：4 Pages

IXYS

艾赛斯