IXGP30N60C3

GenX3 600V IGBT

HighSpeedPTIGBTsfor40-100kHzswitching Features Optimizedforlowswitchinglosses SquareRBSOA Internationalstandardpackages

IXGP30N60C3C1

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

HighSpeedPTIGBTsfor40-100kHzSwitching Features ●OptimizedforLowSwitchingLosses ●SquareRBSOA ●Anti-ParallelSchottkyDiode ●InternationalStandardPackages Advantages ●HighPowerDensity ●LowGateDriveRequirement Applications ●HighFrequencyPowerInverters ●UPS ●

IXGP30N60C3D4

GenX3 600V IGBT With Diode

HighSpeedPTIGBTsfor 40-100kHzswitching Features ●Optimizedforlowswitchinglosses ●SquareRBSOA ●Anti-parallelultrafastdiode ●Internationalstandardpackages Advantages ●Highpowerdensity ●Lowgatedriverequirement Applications ●HighFrequencyPowerInverters ●UPS

IXGP30N60C2

HiPerFAST IGBT C2- Class High Speed IGBTs

IXGP30N60C2

PT 高频IGBT; • 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT\n;

IXGP30N60C3

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

IXGP30N60C3D4

PT 高频IGBT; • 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT\n;

IXGP30N60C3

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 220W TO220AB

IXGP30N60C3C1

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 220W TO220

IXGP30N60C3D4

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 220W TO220AB