NPT 超高电压IGBT

• 高阻断电压\n• 高峰值电流能力\n• 高功率密度\n• 低饱和电压\n• 国际标准和专有ISOPLUSTM封装;

Littelfuse

力特

High Voltage IGBT

文件：197.03 Kbytes 页数：5 Pages

IXYS

艾赛斯

Package：i4-Pac™-5（3 引线）；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 3000V 22A 100W I4-PAK

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Peak Current Capability • Low Saturation Voltage Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode

文件：204.57 Kbytes 页数：5 Pages

IXYS

艾赛斯

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

Features ● High Blocking Voltage ● Anti-Parallel Diode ● International Standard Packages ● Low Conduction Losses Advantages ● Low Gate Drive Requirement ● High Power Density Applications: ● Switch-Mode and Resonant-Mode Power Supplies ● Uninterruptible Power Supplies (UPS) ● Laser Gener

文件：180.26 Kbytes 页数：5 Pages

IXYS

艾赛斯

High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor

Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 4000V~ Electrical Isolation • High Blocking Voltage • High Frequency Operation Advantages • Low Gate Drive Requirement • High Power Density Applications • Switch-Mode and Resonant-Mode Power Suppl

文件：195.74 Kbytes 页数：6 Pages

IXYS

艾赛斯