isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 250mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

PolarHV HiPerFET Power MOSFET

文件：141.46 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features ● Fast Recovery diode ● Unclamped Inductive Switching (UIS) rated ● International standard packages ● Low package inductance - easy to drive and to protect

文件：330.12 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and curr

文件：591.42 Kbytes 页数：4 Pages

IXYS

艾赛斯

Preliminary Technical Information

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IXYS

艾赛斯