isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.03 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFET Q2-Class

文件：180.96 Kbytes 页数：5 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs Q-Class

文件：128.84 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Current Power MOSFET Q-Class

文件：561.48 Kbytes 页数：4 Pages

IXYS

艾赛斯

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive    Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

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VISHAYVishay Siliconix

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