isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：328.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode

文件：132.02 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：367.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode

文件：132.02 Kbytes 页数：5 Pages

IXYS

艾赛斯