HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low d

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IXYS

艾赛斯

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

文件：55.77 Kbytes 页数：2 Pages

IXYS

艾赛斯