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IXFT52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche

IXYS

IXYS Corporation

IXFV52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Corporation

IXFV52N30P

PowerMOSFETs

IXYS

IXYS Corporation

IXFV52N30PS

PowerMOSFETs

IXYS

IXYS Corporation

IXFV52N30PS

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Corporation

IXTQ52N30P

PolarHTPowerMOSFET

Polar™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Switch-ModeandResonant-ModePowerSuppli

IXYS

IXYS Corporation

IXTQ52N30P

N-ChannelEnhancementModePowerMOSFETs

IXYS

IXYS Corporation

IXTQ52N30P

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage-:VDSS=300V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=66mΩ(Max) •FastSwitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switch-ModeandResonant-ModePowerS

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTT52N30P

N-ChannelEnhancementModePowerMOSFETs

IXYS

IXYS Corporation

IXTT52N30P

PolarHTPowerMOSFET

Polar™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Switch-ModeandResonant-ModePowerSuppli

IXYS

IXYS Corporation

详细参数

  • 型号:

    IXFC52N30P

  • 功能描述:

    MOSFET 24 Amps 300V 0.066 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
IXYS
22+
ISOPLUS220?
9000
原厂渠道,现货配单
询价
IXYS/艾赛斯
23+
ISOPLUS22
43000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS/艾赛斯
23+
ISOPLUS220
6000
原装正品,支持实单
询价
IXYS
2022+
ISOPLUS220?
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
原装正品
23+
TO-220
60551
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IXYS/艾赛斯
22+
ISOPLUS220
25000
只做原装进口现货,专注配单
询价
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
询价
IXYS
25+
ISOPLUS22
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多IXFC52N30P供应商 更新时间2025-7-26 9:03:00