High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible Features • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • MOS Gate turn-on - drive simplicity - MOSFET com

文件：63.26 Kbytes 页数：4 Pages

IXYS

艾赛斯

BiMOSFET™ 高电压

• 高阻断电压\n• 高功率密度\n• 高电流处理能力\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 国际标准和专有ISOPLUSTM封装;

Littelfuse

力特

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1600V 9A 100W TO247AD

IXYS

艾赛斯

High Voltage BIMOSFET

High Voltage BIMOSFET™ in High Voltage ISOPLUS i4-PAC™ Monolithic Bipolar MOS Transistor Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability •

文件：91 Kbytes 页数：4 Pages

IXYS

艾赛斯

Monolithic Bipolar MOS Transistor

High Voltage BIMOSFET™ in High Voltage ISOPLUS i4-PAC™ Monolithic Bipolar MOS Transistor Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high

文件：88.26 Kbytes 页数：4 Pages

IXYS

艾赛斯