IXBH9N160G分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

IXBH9N160G属于分立半导体产品的晶体管-UGBT、MOSFET-单。由IXYS Corporation制造生产的IXBH9N160G晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

N-Channel, Enhancement Mode MOSFET compatible

特性 Features

• High Voltage BIMOSFETTM

- replaces high voltage Darlingtons and series connected MOSFETs

- lower effective RDS(on)

• MOS Gate turn-on

- drive simplicity

- MOSFET compatible for 10V turn on gate voltage

• Monolithic construction

- high blocking voltage capability

- very fast turn-off characteristics

• International standard package JEDEC TO-247 AD

• Reverse conducting capability

Applications

• Flyback converters

• DC choppers

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode power supplies

• CRT deflection

• Lamp ballasts

Advantages

• Easy to mount with 1 screw (isolated mounting screw hole)

• Space savings

• High power density