Monolithic Bipolar MOS Transistor

High Voltage BIMOSFET™ Monolithic Bipolar MOS Transistor Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency oper

文件：45.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

High Voltage BIMOSFETTM

High Voltage BIMOSFET™ Monolithic Bipolar MOS Transistor Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency oper

文件：45.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

BiMOSFET™ 高电压

• 高阻断电压\n• 高功率密度\n• 高电流处理能力\n• 低传导损耗\n• MOS栅极开启简单便捷\n• 国际标准和专有ISOPLUSTM封装;

Littelfuse

力特

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1600V 5.7A 68W TO247AD

IXYS

艾赛斯