HVMOS

IPS

华润芯

High Voltage IGBT with optional Diode

VCES = 600 V IC25 = 32 A VCE(sat) typ = 2.2 V Features ● NPT IGBT technology ● low switching losses ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● optional ultr

文件：77.18 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：82.08 Kbytes 页数：4 Pages

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

IXYS

艾赛斯