IXSH24N60A

HiPerFASTIGBT

Features •InternationalstandardpackageJEDECTO-247AD •HighfrequencyIGBTwithguaranteedShortCircuitSOAcapability •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forlowon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •

IXSH24N60B

HighSpeedIGBT

VCES=600V IC25=48A VCE(sat)=2.5V tfityp=170ns Features Internationalstandardpackages GuaranteedShortCircuitSOAcapability LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplic

IXSP24N60B

HighSpeedIGBT

IXST24N60B

HighSpeedIGBT

VCES=600V IC25=48A VCE(sat)=2.5V tfityp=170ns Features Internationalstandardpackages GuaranteedShortCircuitSOAcapability LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplic

SPP24N60CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.185Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPP24N60CFD

CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability

Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •CoolMOSCFDdesignedfor •SoftswitchingPWMStages •LC

SPP24N60CFD

CoolMOSPowerTransistor

SPW24N60CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤185mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPW24N60CFD

CoolMOSPowerTransistor

Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •CoolMOSCFDdesignedfor •SoftswitchingPWMStages •LCD