丝印：25DP06LS；Package：PG-SOT223-3；MOSFET OptiMOSTM Small Signal Transistor, -60 V

Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard

文件：745.76 Kbytes 页数：11 Pages

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常规和逻辑电平的 P 沟道 MOSFET，降低中低功率应用的设计复杂性

• VDS= -60V\n• Very low on-resistance RDS(on)\n• 100% avalance tested\n• Logic level\n• Qualified according to JEDEC standard\n\n优势:\n• Easy interface to MCU\n• Fast switching\n• Avalanche ruggedness;

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MOSFET OptiMOSTM Small Signal Transistor, -60 V

Features • P-Channel • Very low on-resistance RDS(on) • 100 avalanche tested • Normal Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.17657 Mbytes 页数：11 Pages

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OptiMOSTM Power Transistor, -60 V

文件：916.44 Kbytes 页数：10 Pages

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OptiMOSTM Small Signal Transistor, -60 V

文件：1.15871 Mbytes 页数：11 Pages

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