丝印：25DP06LM；Package：PG-SOT223；OptiMOSTM Small Signal Transistor, -60 V

文件：1.15871 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：25DP06LS；Package：PG-SOT223-3；MOSFET OptiMOSTM Small Signal Transistor, -60 V

Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard

文件：745.76 Kbytes 页数：11 Pages

Infineon

英飞凌

P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interfa • Most products qualified to AEC Q101\n• VDS = -60V\n• Wide RDS(on) range\n• Normal Level and Logic Level availability\n\n优势:\n• Easy interface to MCU\n• Improved efficiency at low loads due to low Qg\n• Fast switching\n• Avalanche ruggedness;

Infineon

英飞凌

P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

• VDS= -60V\n• Very low on-resistance RDS(on)\n• 100% avalance tested\n• Logic level\n• Qualified according to JEDEC standard\n\n优势:\n• Easy interface to MCU\n• Fast switching\n• Avalanche ruggedness;

Infineon

英飞凌