ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件：1.03645 Mbytes 页数：41 Pages

TI

德州仪器

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes 页数：34 Pages

TI

德州仪器

5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features

ISO5851 是一款用于 IGBT 和 MOSFET 的 5.7 kVRMS 增强型隔离栅极驱动器，具有 2.5A 的拉电流能力和 5A 的灌电流能力。输入端由 3V 至 5.5V 的单电源供电运行。输出侧支持的电源电压范围为 15V 至 30V。两路互补 CMOS 输入控制栅极驱动器输出状态。76ns 的短暂传播时间保证了对于输出级的精确控制。 \n\n内置的去饱和 (DESAT) 故障检测功能可识别 IGBT 何时处于过载状态。当检测到 DESAT 时，栅极驱动器输出会被拉低为 VEE2 电势，从而将 IGBT 立即关断。 \n\n当发生去饱和故障时，器件会通过隔离隔栅发送故障信号，以将 • 在 VCM = 1500V 时，共模瞬态抗扰度 (CMTI) 的最小值为 100kV/µs\n• 2.5A 峰值拉电流和 5A 峰值灌电流\n• 短暂传播延迟：76ns（典型值），110ns（最大值）\n• 2A 有源米勒钳位 \n• 输出短路钳位\n• 在检测到去饱和故障时通过 FLT 发出故障报警并通过 RST 复位\n• 具有就绪 (RDY) 引脚指示的输入和输出欠压锁定 (UVLO)\n• 有源输出下拉特性，在低电源或输入悬空的情况下默认输出低电平\n• 3V 至 5.5V 输入电源电压\n• 15V 至 30V 输出驱动器电源电压\n• 互补金属氧化物半导体 (CMOS) 兼容输;

TI

德州仪器

ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件：1.03645 Mbytes 页数：41 Pages

TI

德州仪器

丝印：ISO5851Q；Package：SOIC；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件：1.03645 Mbytes 页数：41 Pages

TI

德州仪器

丝印：ISO5851Q；Package：SOIC；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件：1.03645 Mbytes 页数：41 Pages

TI

德州仪器

丝印：ISO5851Q；Package：SOIC；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件：1.03645 Mbytes 页数：41 Pages

TI

德州仪器

丝印：ISO5851Q；Package：SOIC；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件：1.03645 Mbytes 页数：41 Pages

TI

德州仪器

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes 页数：34 Pages

TI

德州仪器

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes 页数：34 Pages

TI

德州仪器