EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

General Description The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263) and TO-220 plastic packages. These devices are intended for use in automoti

文件：200.36 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

文件：170.09 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

文件：170.09 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

文件：170.09 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 360V 21A 150W TO252AA

ONSEMI

安森美半导体

IGBT, 360V, 17A, 1.58V, 300mJ, D2PAKEcoSPARK® I, N-Channel Ignition

The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the next generation IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263) and TO-220 plastic packages. These devices are intended for use in automotive ignition circuits, s • SCIS Energy = 300mJ at TJ = 25°C\n• Logic Level Gate Drive\n• Space saving D-Pak package availability;

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 360V 21A 150W TO252AA

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT, 360V, 17A, 1.58V, 300MJ, D

ONSEMI

安森美半导体