8A, 600V Stealth??Diode

General Description The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions.

文件：129.259 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

8A, 600V Stealth??Diode

General Description The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions.

文件：129.259 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

8A, 600V Stealth™ Diode

General Description\nThe ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions.\nT • Soft Recovery. . . . . . . . . . . . . . . . . . . . tb / ta 2.5\n• Operating Temperature . . . . . . . . . . . . . . . 175oC\n• Avalanche Energy RatedApplications\n• Hard Switched PFC Boost Diode\n• Motor Drive FWD\n• Snubber Diode;

ONSEMI

安森美半导体

8A，600V，STEALTH™ 二极管

ISL9R860S3ST 是经过优化的 STEALTH™ 二极管，可在高频率的硬开关应用中实现低损耗性能。 STEALTH™ 系列在典型运行条件下，具备低反向恢复电流 (IRR) 和出色的软恢复特性。 该器件在电源及其他电源开关应用中用作续流或升压二极管。 低 IRR和短 ta 阶段可降低开关晶体管中的损耗。 软恢复可以减小振铃，扩大二极管不使用其他缓冲电路而运行的条件范围。 考虑将Stealth™ 二极管与SMPS IGBT配合使用，以更低成本提供最高效、最高功率密度的设计。 •Stealth 恢复，Trr=28 ns（需 IF= 8 A）\n•最大正向电压，VF=2.4 V（需 TC=25°C）\n•600 V 反向电压和高可靠性\n•雪崩能量额定值\n•符合 RoHS 标准;

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 8A TO263AB

ONSEMI

安森美半导体