N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

文件：2.77079 Mbytes 页数：5 Pages

Bychip

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 62A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：297.74 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

文件：135.43 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel 30-V (D-S) MOSFET

文件：1.1407 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

文件：135.43 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

文件：149.28 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

文件：149.28 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

文件：149.28 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ONSEMI

安森美半导体

N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ONSEMI

安森美半导体