丝印：71441MRZ；Package：QFN；Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

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丝印：71441MRZ；Package：QFN；Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

RENESAS

瑞萨

丝印：71441MRZ；Package：QFN；Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

RENESAS

瑞萨

Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

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Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified & Screened to DLA VID V62/25604 • Refer to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU) • All screening and QCI is in accordance with SAE AS6294/1) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Singl

文件：1.46747 Mbytes 页数：35 Pages

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丝印：71441MRZ；Package：QFN；Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

RENESAS

瑞萨

丝印：71441MRZ；Package：QFN；Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

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Radiation Tolerant 12V Half-Bridge GaN FET Driver

The ISL71441M is a PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON), high QGS enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and high gate drive c • Up to 20V bootstrap voltage half-bridge driver\n• Programmable 4.5V to 5.5V gate drive voltage\n• Single tri-level PWM input control\n• Separate source and sink driver outputs for independent gate turn-on and turn-off control\n• High-side peak driver current: 5A\n• Low-side peak driver current: 10;

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