丝印：71441MRZ；Package：QFN；Radiation Tolerant 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input control ▪ Separate source and sink driver outputs ▪ High-side peak drive: 2A Sourcin

文件：2.42734 Mbytes 页数：44 Pages

RENESAS

瑞萨

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified & Screened to DLA VID V62/25604 • Refer to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU) • All screening and QCI is in accordance with SAE AS6294/1) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Singl

文件：1.46747 Mbytes 页数：35 Pages

RENESAS

瑞萨

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified & Screened to DLA VID V62/25604 • Refer to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU) • All screening and QCI is in accordance with SAE AS6294/1) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Singl

文件：1.46747 Mbytes 页数：35 Pages

RENESAS

瑞萨

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified & Screened to DLA VID V62/25604 • Refer to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU) • All screening and QCI is in accordance with SAE AS6294/1) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Singl

文件：1.46747 Mbytes 页数：35 Pages

RENESAS

瑞萨