isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -50A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= -10V DESCRIPTION · Motor control and drive · Battery management · Genaral Power Switching

文件：261.11 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Enhancement Mode Power MOSFET

文件：1.11293 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

P-Channel 60 V (D-S) MOSFET

文件：971.73 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

文件：184.9 Kbytes 页数：7 Pages

NEC

瑞萨