ISC50P06

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-50A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=-10V DESCRIPTION ·Motorcontrolanddrive ·Batterymanagement ·GenaralPowerSwitching

LMAK50P06

P-ChannelEnhancementModePowerMOSFET

ME50P06

P-Channel60V(D-S)MOSFET

NP50P06KDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=−10V,ID=−25A) RDS(on)2=23mΩMAX.(VGS=−4.5V,ID=−25A) •Lowinputcapacitance

NP50P06KDG

-60V–-50A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=17mMax.(VGS=-10V,ID=-25A) RDS(on)=23mMax.(VGS=-4.5V,ID=-25A) Lowinputcapacitance:Ciss=50

NP50P06SDG

-60V–-50A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=16.5mMax.(VGS=-10V,ID=-25A) RDS(on)=23.0mMax.(VGS=-4.5V,ID=-25A) Lowinputcapacitance:Ciss

SQD50P06

AutomotiveP-Channel60V(D-S)175째CMOSFET

SQM50P06

AutomotiveP-Channel60V(D-S)175째CMOSFET

TS50P06G

GlassPassivatedBridgeRectifiers

TS50P06G

GlassPassivatedBridgeRectifiers