SiC Schottky DIODE

FEATURES ·Very low leakage current ·Planar passivated chips ·Improved thermal behaviour APPLICATIONS ·Antisaturation diode ·SMPS,UPS ·Snubber diode

文件：288.11 Kbytes 页数：2 Pages

ISC

无锡固电

SiC Schottky Diode

DESCRIPTION ·Very low leakage current ·Planar passivated chips ·Improved thermal behaviour APPLICATIONS ·Antisaturation diode ·SMPS,UPS ·Snubber diode

文件：286.93 Kbytes 页数：2 Pages

ISC

无锡固电

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

文件：119.32 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

文件：221.44 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

MOSFET POWER AMPLIFIER

文件：134.44 Kbytes 页数：8 Pages

TI

德州仪器