isc Epitaxial Silicon Avalanche photodiode

DESCRIPTION • High gain at low bias voltage • Low cose • APD with 0.04mm2 active area • 230um diameter active area • Low capacitance • Optimum gain:50-60 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Laser range finder • High spee

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ISC

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Ultrafast Rectifier

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PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

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ETCList of Unclassifed Manufacturers

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N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor • Audio Amplifiers

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INTERFET