丝印：DPAK；Package：TO-252；isc Silicon PNP Power Transistor

文件：354.37 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Features • High breakdown voltage (VDSS = 1500V) • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator Application High speed power switching

文件：48.65 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1835E is a variable capacitance diode designed for UHF applications. The KV1835E is available in a very small URD Surface Mount Package. FEATURES ■ Very Small URD Surface Mount Package ■ Very Low Operating Voltage (1 to 4 V) ■ Large Capacitance Ratio (A = 2.8 minimum) ■ Ex

文件：24.22 Kbytes 页数：4 Pages

Toko

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1835E is a variable capacitance diode designed for UHF applications. The KV1835E is available in a very small URD Surface Mount Package. FEATURES ■ Very Small URD Surface Mount Package ■ Very Low Operating Voltage (1 to 4 V) ■ Large Capacitance Ratio (A = 2.8 minimum) ■ Ex

文件：24.22 Kbytes 页数：4 Pages

Toko