IS93C46-3

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46-3

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM; • State-of-the-art architecture\n   — Non-volatile data storage\n   — Low voltage operation:\n3.0V (Vcc = 2.7V to 6.0V)\n   — Full TTL compatible inputs and outputs\n   — Auto increment for efficient data dump\n• Low voltage read operation\n   — Down to 2.7V\n• Hardware and software write protection\n  — Defaults to write-disabled state at power-up\n  — Software instructions for write-enable/disable\n• Advanced low voltage CMOS E2PROM technology\n• Versatile, easy-to-use Interface\n   — Self-timed programming cycle\n   — Automatic erase-before-write\n   — Programming status indicator\n   — Word and chip erasable\n   — Stop SK anytime for power savings\n• Durable and reliable\n   — 10-year data retention after 100K write cycles\n   — 100,000 write cycles\n   — Unlimited read cycles\n  \n;

OVERVIEW\nThe IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of the device, which includes read, write, and mode enable functions. The data out pin (DOUT) indicates the status of the device during in the self-timed nonvolatile programming cycle.\nThe self-timed write cycle includes an automatic erase-before-write capability. To protect against inadvertent writes, the WRITE instruction is accepted only while the chip is in the write enabled state. Data is written in 16 bits per write instruction into the selected register. If Chip Select (CS) is brought HIGH after initiation of the write cycle, the Data Output (DOUT) pin will indicate the READY/BUSY status of the chip.FEATURES\n• State-of-the-art architecture\n   — Non-volatile data storage\n   — Low voltage operation:\n3.0V (Vcc = 2.7V to 6.0V)\n   — Full TTL compatible inputs and outputs\n   — Auto increment for efficient data dump\n• Low voltage read operation\n   — Down to 2.7V\n• Hardware and software write protection\n  — Defaults to write-disabled state at power-up\n  — Software instructions for write-enable/disable\n• Advanced low voltage CMOS E2PROM technology\n• Versatile, easy-to-use Interface\n   — Self-timed programming cycle\n   — Automatic erase-before-write\n   — Programming status indicator\n   — Word and chip erasable\n   — Stop SK anytime for power savings\n• Durable and reliable\n   — 10-year data retention after 100K write cycles\n   — 100,000 write cycles\n   — Unlimited read cycles\n  \nAPPLICATIONS\n   The IS93C46-3 is ideal for high-volume applications requiring low power and low density storage. This device uses a low cost, space saving 8-pin package. Candidate applications include robotics, alarm devices, electronic locks, meters and instrumentation settings.

IS93C46-3G

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46-3GI

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46-3GR

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46-3GRI

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46-3P

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46-3PI

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW TheIS93C46-3isalowcost1,024-bit,non-volatile,serialE2PROM.ItisfabricatedusingISSI’sadvancedCMOSE2PROMtechnology.TheIS93C46-3providesefficientnon-volatileread/writememoryarrangedas64registersof16bitseach.Seven9-bitinstructionscontroltheoperationoft

IS93C46A

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION TheIS93C46A/56A/66Aisalow-cost1kb/2kb/4kbnon-volatile,ISSI®serialEEPROM.ItisfabricatedusinganenhancedCMOSdesignandprocess.TheIS93C46A/56A/66Acontainpowerefficientread/writememory,andorganziationofeither128/256/512bytesof8bitsor64/128/256 word

IS93C46A-3G

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION TheIS93C46A/56A/66Aisalow-cost1kb/2kb/4kbnon-volatile,ISSI®serialEEPROM.ItisfabricatedusinganenhancedCMOSdesignandprocess.TheIS93C46A/56A/66Acontainpowerefficientread/writememory,andorganziationofeither128/256/512bytesof8bitsor64/128/256 word