1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46A/56A/66A is a low-cost 1kb/2kb/4kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A/56A/66A contain power efficient read/write memory, and organziation of either 128/256/512 bytes of 8 bits or 64/128/256 word

文件：74.53 Kbytes 页数：13 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION\nThe IS93C46A is a low-cost 1kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46A contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or • Industry-standard Microwire Interface\n— Non-volatile data storage\n— Low voltage operation: Vcc = 2.5V to 5.5V\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• User Configured Memory Organization\n— By 16-bit or by 8-bit\n• Hardware and software write protect;

ISSI

矽成半导体