1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

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1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW\nThe IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of the • State-of-the-art architecture\n   — Non-volatile data storage\n   — Low voltage operation:\n3.0V (Vcc = 2.7V to 6.0V)\n   — Full TTL compatible inputs and outputs\n   — Auto increment for efficient data dump\n• Low voltage read operation\n   — Down to 2.7V\n• Hardware and software write protection;

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

矽成半导体

1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C46-3 is a low cost 1,024-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C46-3 provides efficient non-volatile read/write memory arranged as 64 registers of 16 bits each. Seven 9-bit instructions control the operation of t

文件：83.42 Kbytes 页数：10 Pages

ISSI

矽成半导体