4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体

4096-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW\nThe IS93C66-3 is a low cost 4,096-bit, non-volatile, serial E2PROM. It is fabricated using ISSI's advanced CMOS E2PROM technology. The IS93C66-3 provides efficient non-volatile read/write memory arranged as 256 registers of 16 bits each. Seven 11-bit instructions control the operation of t • State-of-the-art architecture\n— Non-volatile data storage\n— Low voltage operation:\n3.0V (Vcc = 2.7V to 6.0V)\n— Full TTL compatible inputs and outputs\n— Auto increment for efficient data dump\n• Low voltage read operation\n— Down to 2.7V\n• Hardware and software write protection\n— Defaults to;

ISSI

矽成半导体

4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体

4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体

4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体

4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体

4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体

4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM

文件：83.04 Kbytes 页数：10 Pages

ISSI

矽成半导体