1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u

文件：547.72 Kbytes 页数：16 Pages

ISSI

矽成半导体

1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u

文件：547.72 Kbytes 页数：16 Pages

ISSI

矽成半导体

1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u

文件：547.72 Kbytes 页数：16 Pages

ISSI

矽成半导体

1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u

文件：547.72 Kbytes 页数：16 Pages

ISSI

矽成半导体

1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C46D is a 1Kb non-volatile, ISSI ® serial EEPROM. It is fabricated using an enhanced CMOS design and process. The IS93C46D contains power-efficient read/write memory, and organization of 128 bytes of 8 bits or 64 words of 16 bits. When the ORG pin is connected to Vcc or left u

文件：547.72 Kbytes 页数：16 Pages

ISSI

矽成半导体