5V Low Power Asynchronous SRAM

The ISSI IS62C5128BL and IS65C5128BL are high-speed, 4,194,304-bit static RAMs organized as 524,288 words by 8 bits. They are fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 45ns w • High-speed access time: 45ns\n• Low Standby Power: 10 W(typical)CMOS standby\n• Single 5V ± 10% power supply\n• Available in 32-pin sTSOP-I, 32-pin SOP and 32-pin TSOP-II packages\n• Lead-free available;

ISSI

矽成半导体

TTL compatible interface levels

文件：512.84 Kbytes 页数：14 Pages

ISSI

矽成半导体

512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature

文件：806.68 Kbytes 页数：15 Pages

ISSI

矽成半导体

TFBGA-48(6x8)

ISSI(美国芯成)

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TSOPII-44

ISSI(美国芯成)

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