128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r

文件：321.21 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r

文件：321.21 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r

文件：321.21 Kbytes 页数：19 Pages

ISSI

矽成半导体

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 μW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or r

文件：321.21 Kbytes 页数：19 Pages

ISSI

矽成半导体