IS64WV12816DBLL中文资料下载供应代理ISSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS64WV12816DBLL	文件：272.47 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe 文件：272.47 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12BA3	文件：272.47 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe 文件：272.47 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12BLA3	文件：272.47 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe 文件：272.47 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12CTA3	文件：272.47 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe 文件：272.47 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12CTLA3	文件：272.47 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe 文件：272.47 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLL/DBLS	文件：201.17 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件：201.17 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLLSLASHDBLS	文件：201.17 Kbytes Page：21 Pages	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM 文件：201.17 Kbytes 页数：21 Pages	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12BLA3	文件：300 bytes Page：1 Pages	静态随机存取存储器 2Mb 12ns 128Kx16 Async 静态随机存取存储器	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12BLA3-TR	文件：300 bytes Page：1 Pages	静态随机存取存储器 2Mb 12ns 128Kx16 Async 静态随机存取存储器	ISSI 矽成半导体	ISSI
IS64WV12816DBLL-12CTLA3	文件：300 bytes Page：1 Pages	静态随机存取存储器 2M (128Kx16) 12ns Async 静态随机存取存储器	ISSI 矽成半导体	ISSI

详细参数

型号：
IS64WV12816DBLL
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	IS64WV12816DBLL-12CTLA3	ISSI	23+	44-TSOPII	73390	专业分销产品!原装正品!价格优势!	询价
千层芯半导体(深圳)有限公司	IS64WV12816DBLL-12BLA3-TR	ISSI	24+	SMD	15600	静态随机存取存储器2Mb12ns128Kx16Async静态随机存取	询价
深圳市斌腾达科技有限公司	IS64WV12816DBLL-12BLA3	ISSI, Integrated Silicon Solut	21+	48-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS64WV12816DBLL-12CTLA3-TR	ISSI, Integrated Silicon Solut	24+	44-TSOP II	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS64WV12816DBLL-12CTLA3-TR	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS64WV12816DBLL-12BLA3	ISSI(美国芯成)	2447	miniBGA-48(6x8)	315000	480个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市科雨电子有限公司	IS64WV12816DBLL-12CTLA3-TR	ISSI	25+	TSOP-44	1000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	IS64WV12816DBLL-12BLA3	ISSI	21+	BGA48	2322	只做原装正品,不止网上数量,欢迎电话微信查询!	询价
深圳市冠亿通科技有限公司	IS64WV12816DBLL-12CTLA3-TR	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS64WV12816DBLL-12BLA3	ISSI(美国芯成)	2021+	miniBGA-48(6x8)	499		询价

更多IS64WV12816DBLL供应商更新时间2025-12-10 16:31:00

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