128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

文件：201.17 Kbytes 页数：21 Pages

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128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

DESCRIPTION TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-pe

文件：272.47 Kbytes 页数：21 Pages

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128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Da

文件：564.83 Kbytes 页数：14 Pages

ISSI

矽成半导体

128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

文件：729.72 Kbytes 页数：14 Pages

ISSI

矽成半导体