首页 >IS62WV51216EFBLL>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL) Optional ERR 文件:748.93 Kbytes 页数:20 Pages | ISSI 矽成半导体 | ISSI | ||
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL) Optional ERR 文件:748.93 Kbytes 页数:20 Pages | ISSI 矽成半导体 | ISSI | ||
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL) Optional ERR 文件:748.93 Kbytes 页数:20 Pages | ISSI 矽成半导体 | ISSI | ||
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL) Optional ERR 文件:748.93 Kbytes 页数:20 Pages | ISSI 矽成半导体 | ISSI | ||
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) TTL compatible interface levels Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL) Optional ERR 文件:748.93 Kbytes 页数:20 Pages | ISSI 矽成半导体 | ISSI | ||
IS62WV51216EFBLL | PowerSaver™ Lower Power Asynchronous SRAM | ISSI 矽成半导体 | ISSI | |
Package:48-VFBGA;包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 48VFBGA | ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc | ||
Package:44-TSOP(0.400",10.16mm 宽);包装:托盘 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 44TSOP II | ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc | ||
Package:44-TSOP(0.400",10.16mm 宽);包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 44TSOP II | ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc |
技术参数
- Organization:
512Kx16
- Power Supply:
2.2-3.6
- Speed (ns):
45
- Package Pins:
BGA(48)
- Temperature Grade:
I
- Status:
Prod
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
BGA |
4500 |
ISSI存储芯片在售 |
询价 | ||
ISSI, Integrated Silicon Solut |
21+ |
84-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
ISSI, Integrated Silicon Solut |
24+ |
48-VFBGA(6x8) |
56200 |
一级代理/放心采购 |
询价 | ||
ISSI(美国芯成) |
2447 |
VFBGA-48(6x8) |
315000 |
480个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
ISSI(美国芯成) |
2021+ |
TSOPII-44 |
499 |
询价 | |||
ISSI |
23+ |
44TSOP |
10800 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ISSI |
19+ |
TSOP |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ISSI(美国芯成) |
2022+原装正品 |
VFBGA-48(6x8) |
18000 |
支持工厂BOM表配单 公司只做原装正品货 |
询价 | ||
ISSI |
23+ |
TSOP44 |
5200 |
原厂原装正品 |
询价 | ||
ISSI, Integrated Silicon Solu |
23+ |
44-TSOP II |
7300 |
专注配单,只做原装进口现货 |
询价 |
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