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IS62WV51216EFBLL-55B3I

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS62WV51216EFBLL-55B3LI

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS62WV51216EFBLL-55BI

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS62WV51216EFBLL-55BLI

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS62WV51216EFBLL-55TLI

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件:748.93 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS62WV51216EFBLL

PowerSaver™ Lower Power Asynchronous SRAM

ISSI

矽成半导体

IS62WV51216EFBLL-45BLI-TR

Package:48-VFBGA;包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 48VFBGA

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS62WV51216EFBLL-45TLI

Package:44-TSOP(0.400",10.16mm 宽);包装:托盘 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS62WV51216EFBLL-45TLI-TR

Package:44-TSOP(0.400",10.16mm 宽);包装:卷带(TR) 类别:集成电路(IC) 存储器 描述:IC SRAM 8MBIT PARALLEL 44TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

技术参数

  • Organization:

    512Kx16

  • Power Supply:

    2.2-3.6

  • Speed (ns):

    45

  • Package Pins:

    BGA(48)

  • Temperature Grade:

    I

  • Status:

    Prod

供应商型号品牌批号封装库存备注价格
ISSI
25+
BGA
4500
ISSI存储芯片在售
询价
ISSI, Integrated Silicon Solut
21+
84-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
ISSI, Integrated Silicon Solut
24+
48-VFBGA(6x8)
56200
一级代理/放心采购
询价
ISSI(美国芯成)
2447
VFBGA-48(6x8)
315000
480个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
ISSI(美国芯成)
2021+
TSOPII-44
499
询价
ISSI
23+
44TSOP
10800
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ISSI
19+
TSOP
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ISSI(美国芯成)
2022+原装正品
VFBGA-48(6x8)
18000
支持工厂BOM表配单 公司只做原装正品货
询价
ISSI
23+
TSOP44
5200
原厂原装正品
询价
ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
专注配单,只做原装进口现货
询价
更多IS62WV51216EFBLL供应商 更新时间2026-1-30 19:24:00